GBJ10005 thru gbj1010 glass passivated bridge rectifier reverse voltage - 50 to 1000 volts forward current - 10.0 ampere f e a tures mechanical d a t a maxi mum r a tin g s and e l ect r i cal charact eri s tic s ratings at 25 c ambient temperature unless otherwise specified. s ingle phas e half-wav e 60hz,re s i sti v e o r inducti v e load,fo r c apac i t i v e load c u rrent der a t e b y 20%. glass passivated chip junction ideal for printed circuit board low reverse leakage current low forward voltage drop case:molded plastic, gbj t erminals : terminals: leads solderable per mil-std-202 method 208 guaranteed epoxy: ul 94v-0 rate flame retardant mounting position: any reliable low cost construction utilizing molded plastic technique dimensions in inches and (millimet er s) high surge current capabiliy parameter s y mbols gbj 10005 gbj 1001 gbj 1002 gbj 1004 gbj 1006 gbj 1008 gbj 1010 unit s ma xi mu m recu rrent peak reve rse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 7 0 140 280 420 560 700 v maximum dc blocking voltage v d c 50 100 200 400 600 800 1000 v maximum average f o rw ard rectified current w i th heatsink at t c = 100 o c i ( av) 10 a peak f o rw ard surge current, 8.3 ms single half-sine - w ave superimposed on rated load (jedec method) i fsm 170 a maximum f o r w ard voltage a t 5.0 a dc and 25 o c v f 1 .1 v max i mum reverse current at t a = 2 5 o c a t rated dc blocking voltage t a = 125 o c i r 1 0 500 a t y pical junction capacitance 1 ) c j 55 p f t y pical t hermal resistance 2 ) r jc 1.4 o c/w operating and storage t e mperature range t j , t s -55 to + 150 o c 1) measured at 1 mhz and applied reverse voltage of 4 vdc. 2) thermal resistance from junction to case with device mounted on 300 mm x 300 mm x 1.6 mm cu plate heatsink. gbj
GBJ10005 thru gbj1010 ra tings and characteristic cur ves 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 1.8 v , inst ant aneous for w ard voltage (v) fi g . 2 t y pical forward characteristics ( per element ) f r o f s u o e n a t n a t s n i , i ) a ( t n e r r u c d r a w f t = 25 c j pulse width=300 s 0 40 80 120 160 180 1 10 100 ) a ( t n e r r u c e g r u s d w f k a e p , i m s f number of cycles a t 60 hz fi g . 3 maximum non-repetitive sur g e current t = 150 c j single half-sine-wave (jedec method) 10 100 1 1 10 100 p a c n o i t c n u j , c ) f p ( e c n a t i c a j v , reverse voltage (v) fi g . 4 t y pical junction capacitance r f=1mhz t = 25 c j 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 t s n i , i t n a s u o e n a e s r e v e r ( t n e r r u c ) a r percent of ra ted peak reverse voltage (%) fi g . 5 t y pical reverse characteristics t = 150 c j t = 125 c j t = 100 c j t = 25 c j 0 2 4 6 8 10 12 25 50 75 100 125 150 ) a ( t n e r r u c d e i f i t c e r e g a r e v a , i o t , case tempera ture ( c) fi g . 1 forward current deratin g curve c resistive or inductive load with heatsink without heatsink
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